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| PD -94115 IRG4BC20MD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Rugged: 10sec short circuit capable at VGS=15V * Low VCE(on) for 4 to 10kHz applications * IGBT Co-packaged with ultra-soft-recovery antiparallel diode * Industry standard TO-220AB package C Short Circuit Rated Fast IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 11A Benefits * Offers highest efficiency and short circuit capability for intermediate applications * Provides best efficiency for the mid range frequency (4 to 10kHz) * Optimized for Appliance Motor Drives, Industrial (Short Circuit Proof) Drives and Intermediate Frequency Range Drives * High noise immune "Positive Only" gate driveNegative bias gate drive not necessary * For Low EMI designs- requires little or no snubbing * Single Package switch for bridge circuit applications * Compatible with high voltage Gate Driver IC's * Allows simpler gate drive n-cha nn el TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C tsc IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Short Circuit Withstand Time Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 18 11 36 36 7.0 10 36 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A s A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------------------------- Typ. ----------0.50 ----2 (0.07) Max. 2.1 2.5 -----80 ------ Units C/W g (oz) www.irf.com 1 3/6/01 IRG4BC20MD Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltage 600 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ---VCE(on) Collector-to-Emitter Saturation Voltage ---------VGE(th) Gate Threshold Voltage 4.0 VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance 3.0 ICES Zero Gate Voltage Collector Current ------VFM Diode Forward Voltage Drop ------IGES Gate-to-Emitter Leakage Current ---V(BR)CES Typ. ---0.67 1.85 2.46 2.07 ----11 3.6 ------1.4 1.3 ---Max. Units Conditions ---V VGE = 0V, IC = 250A ---- V/C VGE = 0V, I C = 1.0mA 2.1 IC = 11A VGE = 15V ---V IC = 18A See Fig. 2, 5 ---IC = 11A, TJ = 150C 6.5 VCE = VGE, IC = 250A ---- mV/C VCE = VGE, IC = 250A ---S VCE = 100V, IC = 11A 250 A VGE = 0V, VCE = 600V 2500 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Q rr di(rec)M /dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Min. ---------------------------------------------------------------Diode Peak Reverse Recovery Current ------Diode Reverse Recovery Charge ------Diode Peak Rate of Fall of Recovery ---During tb ---Typ. 39 5.3 20 21 37 463 340 0.41 2.03 2.44 19 41 590 600 3.49 7.5 460 54 14 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 59 IC = 11A 8.0 nC VCC = 400V See Fig. 8 30 VGE = 15V ---TJ = 25C ---ns IC = 11A, VCC = 480V 690 VGE = 15V, RG = 50 510 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 3.7 ---TJ = 150C, See Fig. 9, 10, 11, 18 ---ns IC = 6.5A, VCC = 480V ---VGE = 15V, RG = 50 ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 --- = 1.0MHz 55 ns TJ = 25C See Fig. 90 TJ = 125C 14 IF = 8.0A 5.0 A TJ = 25C See Fig. 8.0 TJ = 125C 15 VR = 200V 138 nC TJ = 25C See Fig. 360 TJ = 125C 16 di/dt 200A/s ---- A/s TJ = 25C See Fig. ---TJ = 125C 17 2 www.irf.com IRG4BC20MD 12 10 Load Current ( A ) 8 Duty cycle : 50% Tj = 125C Tsink = 90C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 13W 60% of rated voltage 6 4 2 Ideal diodes 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) IC , Collector-to Emitter Current (A) 10 10 TJ = 150 C TJ = 25 C 1 1 T J = 150C T J = 25C VGE= 15V 20s PULSE WIDTH 0.1 1.0 VCE , Collector-to-Emitter Voltage (V) 0.1 10.0 0.1 6 8 10 V CC = 50V 5s PULSE WIDTH 12 14 16 VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC20MD 20 4.0 VGE = 15V 80s PULSE WIDTH VCE , Collector-to Emitter Voltage (V) Maximum DC Collector Current(A) IC = 22A 15 3.0 10 IC = 11A 2.0 5 IC = 5.5A 1.0 0 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 TC , Case Temperature ( C) TJ , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D =t 1 / t2 2. Peak T = PDM x Z thJC + TC J 0.0001 0.001 0.01 0.1 1 t2 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20MD 800 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 11A 16 600 C, Capacitance (pF) Cies 400 12 8 200 Coes Cres 4 0 1 10 100 0 0 10 20 30 40 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2.5 VCC = 480V VGE = 15V TJ = 25C I C = 11A 100 RG = 50 VGE = 15V VCC = 480V 10 IC = 22A IC = 11A IC = 5.5A 1 Total Switching Losses (mJ) 2.4 2.3 0 10 20 30 40 50 Total Switching Losses (mJ) 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G, Gate Resistance ( ) T J, Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC20MD 10.0 RG = 50 TJ = 150C VGE = 15V VCC = 480V 100 VGE = 20V T J = 125 Total Switching Losses (mJ) 8.0 6.0 C, Capacitance(pF) SAFE OPERATING AREA 10 4.0 2.0 0.0 5 10 15 20 25 1 1 10 100 1000 IC , Collector Current (A) VDS , Drain-to-Source Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Insta ntaneo us F orw ard Cu rrent - I F (A ) 10 TJ = 15 0C TJ = 12 5C TJ = 2 5C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Fo rwa rd V oltage D rop - V F M (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC20MD 100 100 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 80 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C IF = 16 A t rr - (ns) 60 I F = 8 .0A I IR R M - (A ) I F = 16 A 10 40 I F = 8.0 A I F = 4 .0A I F = 4 .0 A 20 0 100 d i f /d t - (A / s) 1000 1 100 1000 d i f /d t - (A / s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 500 10000 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 400 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 300 d i(re c)M /d t - (A /s) Q R R - (n C ) I F = 16 A 200 I F = 4 .0A 1000 I F = 8.0 A I F = 16 A I F = 8 .0A 100 IF = 4.0 A 0 100 100 100 di f /dt - (A /s) 1000 1000 di f /dt - (A /s) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4BC20MD 90% Vge +Vge Same ty pe device as D .U.T. Vce Ic 80% of Vce 430F D .U .T. 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = t1 + 5 S V c e ic d t t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = trr id d t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 E re c = t4 V d id d t t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC20MD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000 F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC20MD Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG = 50 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Case Outline -- TO-220AB 1 0 .5 4 (.41 5 ) 1 0 .2 9 (.40 5 ) 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 3.78 (.149) 3.54 (.139) -A6.47 (.255 ) 6.10 (.240 ) 1.15 (.045) M IN -B - 4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 2 3 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 2 0 A B . 3X 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 3.96 (.160) 3.55 (.140) LEAD 1234- A S S IG N M E N T S GA TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160 ) 3.55 (.140 ) 0.93 (.037) 0.69 (.027) MBAM 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0) 2X 3X 3X 0.55 (.022) 0.46 (.018) 0 .3 6 (.01 4 ) 2.92 (.115) 2.64 (.104) CONFORMS TO JEDEC OUTLINE TO-220AB D im e ns io ns in M illim e ters a nd (In c he s ) Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01 10 www.irf.com |
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